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DGT409BCA
DGT409BCA
Reverse Blocking Gate Turn-off Thyristor
Replaces January 2000 version, DS4414-4.0 DS4414-4.1 February 2002
APPLICATIONS
The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters (CSI). Reverse recovery ratings and characteristics are included.
KEY PARAMETERS 1500A ITCM VDRM/VDRM 6500V dVD/dt 1000V/s diT/dt 300A/s
FEATURES
s Reverse Blocking Capability s Double Side Cooling s High Reliability In Service s High Voltage Capability s Fault Protection Without Fuses s Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
ORDERING INFORMATION
Order as: DGT409BCA6565
Outline type code: CA See Package Details for further information Fig. 1 Package outline
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DGT409BCA
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Tj = 115C unless staed otherwise Symbol VDRM VRRM ITCM ITSM I2t diT/dt Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage IDM = 100mA IRRM = 100mA Conditions Max. 6500 6500 1500 3 45 x 103 300 175 1000 200 Units V V A kA A2s A/s V/s V/s nH
Repetitive peak controllable on-state current VD = 4300V, diGQ/dt = 20A/s, CS = 2.0F Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current 10ms half sine. 10ms half sine. VD = 3000V, IT = 800A, IFG > 20A, tr > 1.5s VD = 3000V, RGK 1.5
dVD/dt
Rate of rise of off-state voltage VD = 3000V, VRG = -2V
LS
Peak stray inductance in snubber circuit
IT = 1500A, VDM = 6000V, dIGQ/dt = 20A/s, CS = 2F
GATE RATINGS
Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) IRGM Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time Continuous reverse gate-cathode current Conditions This value may be exceeded during turn-off VRGM = 16V, No gate cathode resistor Min. 20 15 50 150 Max. 25 70 10 15 60 50 Units V A W kW A/s s s mA
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DGT409BCA
THERMAL RATINGS AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range Clamping force Clamping force 12.0kN With mounting compound per contact Min. -40 11.0 Max. 0.046 0.073 0.124 0.009 115 115 15.0 Units
o
C/W C/W C/W C/W
o
o
o
o
C C
o
kN
CHARACTERISTICS
Tj = 115oC unless stated otherwise Symbol VTM IDM IRRM VGT IGT IRGM EON td tr EOFF tgs tgf tgq QGQ QGQT IGQM On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current IT = 800A, VDM = 3000V Snubber Cap CS = 2F, diGQ/dt = 20A/s Parameter Conditions At 200A peak, IG(ON) = 4A d.c. VDRM = 6500V, VRG = 0V At VRRM = 6500V VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 3000V IT = 400A, dIT/dt = 150A/s IFG = 20A, tr < 1.5s Min. Max. 4 100 100 1 2 50 2500 3 7 2500 Units V mA mA V A mA mJ s s mJ s s s C C A
See Figs. 16 and 17 See Figs. 16 and 17 See Figs. 16 and 17 3600 7200 350
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DGT409BCA
Anode voltage and current
0.9x VD
0.9x IT
VD
td tgt
tr
VDP
0.1x VD
ITAIL
tgs tgf tgq
dIFG/dt
Gate voltage and current
IFG VFG IG(ON)
0.1x IFG
QGQ 0.5x IGQM IGQM V(RG)BR
Recommended gate conditions to switch off ITCM = 800A: IFG = 30A IG(ON) = 4A d.c. tw1(min) = 20s IGQM = 270A typical diGQ/dt = 30A/s QGQ = 2200C VRG(min) = 2V VRG(max) = 15V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications.
Fig.2 General switching waveforms
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VRG
tw1
0.1x IGQ
VD
IT
VDM
dVD/dt
DGT409BCA
IT
QS
VR
IRR
15s
Fig.3 Reverse recovery waveforms
CURVES
2.0 1.8 1.6
Gate trigger voltage, VGT - (V)
4.0 IGT 3.6 3.2
Gate trigger current, IGT - (A)
1000 900
Instantaneous on-state current, IT - (A)
800 700 600 500 Tj = 115C Tj = 25C
1.4 1.2 1.0 VGT
2.8 2.4 2.0 1.4 1.2 0.8 0.4 0 150
0.8 0.6 0.4 0.2 0 -50
400 300 200 100 0 0 1
-25
0 25 50 75 100 Junction temperature, Tj - (C)
125
2 3 4 5 6 7 Instantaneous on-state voltage, VT - (V)
8
Fig.4 Maximum gate trigger voltage/current vs junction temperature
Fig.5 Maximum on-state characteristics
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DGT409BCA
1.5 Maximum permissible turn-off current, ITCM - (kA)
Reverse recovery energy per pulse, EOFF - (J)
Conditions: 1.4 T = 115C, j 1.3 VDM = 4300V, dIGQ/dt = 20A/s 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5
7.0
Conditions: 6.5 T = 100C, c V = 3500V 6.0 R 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IT = 150A IT = 300A
0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Snubber capacitance, CS - (F) 1.8 2.0
0 0 20 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/s)
Fig.5 Maximum dependence of ITCM on CS
Fig.6 Maximum reverse recovery energy vs rate of fall of anode current
4000
Reverse recovery stored charge, QS - (C)
Conditions: T = 100C, 3800 Vc = 3500V R
800
Conditions: T = 100C, 750 Vc = 3500V R
Peak reverse recovery current, IRR - (A)
3600 3400 3200 3000 2800 2600 2400 2200 2000 0 20 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/s) IT = 150A IT = 300A
700 650 600 550 500 450 400 350 300 0 20 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/s) IT = 150A IT = 300A
Fig.7 Maximum reverse recovery stored charge vs rate of fall of anode current 6/11
Fig.8 Maximum reverse recovery current vs rate of fall of anode current
DGT409BCA
2500
Conditions: T = 100C, 2300 Vc = 3500V R
Peak reverse recovery power, PPK - (kW)
6000
2100 1900 1700 IT = 150A 1500 1300 1100 900 700 500 0 20 40 60 80 100 120 140 160 180 200 Rate of fall of anode current, dI/dt - (A/s)
Turn-on energy loss, EON - (mJ)
IT = 300A
Conditions: 5500 Tj = 115C, IFG = 20A, CS = 2F, RS = 20, 5000 dIT/dt = 150A/s, dIFG/dt = 30A/s 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 100 200
VD = 4500V
VD = 3000V
VD = 1500V
300 400 500 600 On-state current, IT - (A)
700
800
Fig.9 Maximum reverse recovery power vs rate of fall of anode current
Fig.10 Turn-on energy vs on-state current
4000 3500 VD = 4500V
Turn-on energy loss, EON - (mJ)
8 7
tr
3000 2500 V = 3000V D 2000 1500 VD = 1500V 1000 Conditions: Tj = 115C, IT = 400A, 500 CS = 2F, RS = 20, dIT/dt = 150A/s, dIFG/dt = 30A/s 0 0 10 20 30 40 50 Peak forward gate current, IFGM - (A)
Switching time, - (s)
6 5 4 3 2 td
60
Conditions: Tj = 115C, IFG = 20A, 1 CS = 2F, RS = 10, VD = 3000V, dIT/dt = 150A/s dIFG/dt = 30A/s 0 0 100 200 300 400 500 On-state current, IT - (A)
600
700
Fig.11 Turn-on energy vs peak forward gate current
Fig.12 Delay time and rise time vs on-state current
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DGT409BCA
F
9 8 7
Switching time - (s)
Turn-off energy losses, EOFF - (mJ)
VD = 4500V
=4
=3
Conditions: Tj = 115C, IT = 400A, CS = 2F, RS = 20, dIT/dt = 150A/s, dIFG/dt = 30A/s, VD = 3000V Rise time -tr
4500 4000 3500 3000 2500 2000 1500 1000 500 0
,C = S 0.5
=2
V, C
500
00
0V
,C
S
S
=2 F
F
D
6 5 4 3 2 1 0 0 10 20 30 40 50 Peak forward gate current, IFGM - (A) 60 Delay time -td
= 1 0 50 V, CS
V
F 2
V
D
VD
=
Conditions: Tj = 115C,RS = 20, dIGG/dt = 20A/s, CS = 2F 0 200 400 600 800 1000 1200 1400 1600 On-state current, IT - (A)
Fig.13 Switching times vs peak forward gate current
Fig.14 Maximum turn-off energy vs on-state current
4500 4000 3500 3000 2500 2000 VD = 3000V VD = 4500V
18 tgs 16 14
Gate storage time, tgs - (s)
4.5 4.0 3.5
Gate fall time, tgf - (s)
Turn-off energy loss, EOFF - (mJ)
12 10 tgf 8 6 4
3.0 2.5 2.0 1.5
VD = 1500V
1500 1000 500 0 0 10 20 30 40 50 60 Rate of rise of reverse gate current, dIGQ/dt - (A/s) Conditions: Tj = 115C, RS = 10, IT = 800A, CS = 2F
1.0 Conditions: Tj = 115C, CS = 2F, 2 RS = 20, dIGQ/dt = 20A/s 0.5 VDM = 3000V 0 0 0 100 200 300 400 500 600 700 800 Rate of rise of reverse gate current, dIGQ/dt - (A/s)
Fig.16 Gate storage time and fall time vs on-state current
Fig.15 Turn-off energy vs rate of rise of reverse gate current
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DGT409BCA
30 28 26 24
Gate storage time, tgs - (s)
3.0 2.8
Transient thermal impedance, Zth (j-c) - (C/kW )
0.1 dc
2.6 2.4 tgf 2.2
Gate fall time, tgf - (s)
22 20 18 16 14 12 10 8 6
2.0
0.01
1.8 1.6 1.4 1.2 1.0 tgs
0.001
0.8
0.6 Conditions: 0.4 4 Tj = 115C, CS = 2F, RS = 10, IT = 800A, 2 0.2 VDM = 3000V 0 0 0 10 20 30 40 50 60 70 80 Rate of rise of reverse gate current, dIGQ/dt - (A/s)
0.0001 0.001
0.01
0.1 1 Time - (s)
10
100
Fig.17 Gate storage time and fall time vs rate of rise of reverse gate current
Fig.18 Maximum (limit) transient thermal impedance double side cooled
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DGT409BCA
PACKAGE DETAILS
For further package information, please contact the Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.6 0.1 x 1.95 0.05 deep (in both electrodes)
Auxiliary cathode
20 Gate
Cathode O51 nom O38 nom
29.5 nom
O38 nom O56.0 max O63 nom
Nominal weight: 350g Clamping force: 12kN 10% Lead length: 505mm Package outine type code: CA
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of V , r on-state characteristic
TO T
Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177
Impoved gate drive for GTO series connections
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36 nom
Anode
DGT409BCA
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICES Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS4414-4 Issue No. 4.1 February 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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